Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Preparation of Bismuth Titanate Films by Electron Cyclotron Resonance Plasma Sputtering-Chemical Vapor Deposition

Bismuth titanate (Bi,Ti,O,, :BIT) thin films were prepared on the Pt courted MgO(100) substrate by electron cyclotron resonance plasma sputtering-chemical vapor deposition (ECR plasma sputtering-CVD). Bi20, was used as a sputtering target and tetra-isopropoxy-titanium [Ti(i-C3H70)4] as a CVD source. The composition of films was controlled by changing RF power (P,,) of Bi,O, target and Ti source...

Characterization of Nitrogen-rich Silicon Nitride Films Grown by the Electron Cyclotron Resonance Plasma Technique

Amorphous hydrogenated silicon nitride films have been deposited by the electron cyclotron resonance plasma technique, using N2 and SiH4 as precursor gases. The gas flow ratio, deposition temperature and microwave power have been varied in order to study their effect on the properties of the films, which were characterized by Rutherford back-scattering spectrometry, elastic recoil detection ana...

Interpretation of stress variation in silicon nitride films deposited by electron cyclotron resonance plasma

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Effects of Nitrogen Concentration on the Electrical Properties of HfN Gate Insulator Formed by ECR Plasma Sputtering

Investigation of the Substrate Orientation-Dependent on the Electrical Characteristics of HfN Gate Insulator Formed by ECR Plasma Sputtering